IXYS-RFUnited States
MOSFET N-CH 1000V 12A 16SMPD
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1 kV
Continuous drain current12 A
On-resistance1.05 ΩMax · 6A
Gate threshold voltage5.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Power Dissipation (Max) | 940W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad |
| Supplier Device Package | 16-SMPD |
| Other | |
| Base Product Number | IXRFSM12 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2875 pF @ 800 V |
| Mfr | IXYS-RF |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 15V |
| Series | SMPD |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
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