IXRFSM18N50
IXYS-RF美国

IXRFSM18N50

停产单 FET,MOSFET

MOSFET N-CH 500V 19A 16SMPD

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沟道N 沟道
耐压500 V
连续漏极电流19 A
导通电阻340 mΩ

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流19 A
导通电阻340 mΩ最大 · 9.5A
阈值电压6.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)20V
Power Dissipation (Max)835W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / Case16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Supplier Device Package16-SMPD
其他
Base Product NumberIXRFSM18
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 400 V
MfrIXYS-RF
Product StatusObsolete
Rds On (Max) @ Id, Vgs340mOhm @ 9.5A, 20V
SeriesSMPD
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id6.5V @ 250µA

器件图片

技术资料

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