IXTA08N50D2
IXYS美国

IXTA08N50D2

在产单 FET,MOSFETTO-263AA

MOSFET N-CH 500V 800MA TO263

沟道N 沟道
耐压500 V
连续漏极电流800 mA
导通电阻4.6 Ω

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流800 mA
导通电阻4.6 Ω最大 · 400mA
电源
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)-
Power Dissipation (Max)60W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA
其他
Base Product NumberIXTA08
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds312 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs4.6Ohm @ 400mA, 0V
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id-

器件图片

技术资料