IXTA10N60P
IXYS美国

IXTA10N60P

在产单 FET,MOSFETTO-263AA

MOSFET N-CH 600V 10A TO263

沟道N 沟道
耐压600 V
连续漏极电流10 A
导通电阻740 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流10 A
导通电阻740 mΩ最大 · 5A
阈值电压5.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)200W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA
其他
Base Product NumberIXTA10
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1610 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs740mOhm @ 5A, 10V
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 250µA

器件图片

技术资料