IXTA10P50P
IXYS美国

IXTA10P50P

在产单 FET,MOSFETTO-263AA

MOSFET P-CH 500V 10A TO263

沟道P 沟道
耐压500 V
连续漏极电流10 A
导通电阻1 Ω

全部替代型号

查看完整报告

技术参数

沟道P 沟道
耐压500 V
连续漏极电流10 A
导通电阻1 Ω最大 · 5A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA
其他
Base Product NumberIXTA10
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2840 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs1Ohm @ 5A, 10V
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料