IXTA3N50P
IXYS美国

IXTA3N50P

停产单 FET,MOSFETTO-263AA

MOSFET N-CH 500V 3.6A TO263

沟道N 沟道
耐压500 V
连续漏极电流3.6 A
导通电阻2 Ω

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流3.6 A
导通电阻2 Ω最大 · 1.8A
阈值电压5.5 V最大 · 50μA
电源
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)70W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA
其他
Base Product NumberIXTA3
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds409 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs2Ohm @ 1.8A, 10V
SeriesPolarHV™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 50µA

器件图片

技术资料