IXYSUnited States
MOSFET N-CH 600V 7A D2-PAK
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current7 A
On-resistance1.1 ΩMax · 3.5A
Gate threshold voltage5.5 VMax · 100μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 150W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AA |
| Other | |
| Base Product Number | IXTA7 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3.5A, 10V |
| Series | Polar |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA |