IXYSUnited States
MOSFET N-CH 1000V 10A TO247
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1 kV
Continuous drain current10 A
On-resistance1.4 ΩMax · 10A
Gate threshold voltage3.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 400W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 (IXTH) |
| Other | |
| Base Product Number | IXTH10 |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 10A, 10V |
| Series | Depletion |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |