IXTH16N50D2
IXYS美国

IXTH16N50D2

在产单 FET,MOSFETTO-247

MOSFET N-CH 500V 16A TO247-3

沟道N 沟道
耐压500 V
连续漏极电流16 A
导通电阻240 mΩ

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流16 A
导通电阻240 mΩ最大 · 8A
电源
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)0V
Power Dissipation (Max)695W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
其他
Base Product NumberIXTH16
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs199 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds5250 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs240mOhm @ 8A, 0V
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id-

器件图片

技术资料