IXTH24P20
IXYS美国

IXTH24P20

在产单 FET,MOSFETTO-247

MOSFET P-CH 200V 24A TO247

沟道P 沟道
耐压200 V
连续漏极电流24 A
导通电阻150 mΩ

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技术参数

沟道P 沟道
耐压200 V
连续漏极电流24 A
导通电阻150 mΩ最大 · 500mA
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
其他
Base Product NumberIXTH24
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs150mOhm @ 500mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料