IXTH260N055T2
IXYS美国

IXTH260N055T2

在产单 FET,MOSFETTO-247

MOSFET N-CH 55V 260A TO247

沟道N 沟道
耐压55 V
连续漏极电流260 A
导通电阻3.3 mΩ

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技术参数

沟道N 沟道
耐压55 V
连续漏极电流260 A
导通电阻3.3 mΩ最大 · 50A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)480W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
其他
Base Product NumberIXTH260
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10800 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs3.3mOhm @ 50A, 10V
SeriesTrenchT2™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料