IXYSUnited States
DISCMOSFET N-CH STD-HIVOLTAGE TO
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.5 kV
Continuous drain current2 A
On-resistance9.2 ΩMax · 500mA
Gate threshold voltage5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drain to Source Voltage (Vdss) | 1500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 170W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 (IXTH) |
| Other | |
| Base Product Number | IXTH2 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9.2Ohm @ 500mA, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
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