IXTH34N65X2
IXYS美国

IXTH34N65X2

在产单 FET,MOSFETTO-247

MOSFET N-CH 650V 34A TO247

沟道N 沟道
耐压650 V
连续漏极电流34 A
导通电阻105 mΩ

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技术参数

沟道N 沟道
耐压650 V
连续漏极电流34 A
导通电阻105 mΩ最大 · 17A
阈值电压4.5 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)540W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
其他
Base Product NumberIXTH34
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3120 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs105mOhm @ 17A, 10V
SeriesUltra X2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 4mA

器件图片

技术资料