IXTH64N65X
IXYS美国

IXTH64N65X

末批订购单 FET,MOSFETTO-247

MOSFET N-CH 650V 64A TO247

沟道N 沟道
耐压650 V
连续漏极电流64 A
导通电阻51 mΩ

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技术参数

沟道N 沟道
耐压650 V
连续漏极电流64 A
导通电阻51 mΩ最大 · 32A
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)890W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
其他
Base Product NumberIXTH64
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5500 pF @ 25 V
MfrIXYS
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs51mOhm @ 32A, 10V
SeriesUltra X
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料