IXYS美国

IXTK110N20L2

在产单 FET,MOSFETTO-264

MOSFET N-CH 200V 110A TO264

沟道N 沟道
耐压200 V
连续漏极电流110 A
导通电阻24 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压200 V
连续漏极电流110 A
导通电阻24 mΩ最大 · 55A
阈值电压4.5 V最大 · 3mA
电源
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)960W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXTK)
其他
Base Product NumberIXTK110
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds23000 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs24mOhm @ 55A, 10V
SeriesLinear L2™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 3mA

技术资料