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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage300 V
Continuous drain current140 A
On-resistance24 mΩMax · 70A
Gate threshold voltage5 VMax · 500μA
Power
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXTK)
Other
Base Product NumberIXTK140
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14800 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs24mOhm @ 70A, 10V
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 500µA

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