IXYSUnited States
MOSFET N-CH 4700V 2A I5PAK
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage4.7 kV
Continuous drain current2 A
On-resistance20 ΩMax · 1A
Gate threshold voltage6 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drain to Source Voltage (Vdss) | 4700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 220W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Supplier Device Package | ISOPLUSi5-Pak™ |
| Other | |
| Base Product Number | IXTL2 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6860 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 20Ohm @ 1A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 6V @ 250µA |