IXYS美国

IXTM67N10

停产单 FET,MOSFETTO-204AE

MOSFET N-CH 100V 67A TO204AE

沟道N 沟道
耐压100 V
连续漏极电流67 A
导通电阻25 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流67 A
导通电阻25 mΩ最大 · 33.5A
阈值电压4 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-204AE
Supplier Device PackageTO-204AE
其他
Base Product NumberIXTM67
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs25mOhm @ 33.5A, 10V
SeriesGigaMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 4mA

技术资料