IXYSUnited States
MOSFET P-CH 600V 32A SOT227B
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage600 V
Continuous drain current32 A
On-resistance350 mΩMax · 500mA
Gate threshold voltage4 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 890W (Tc) |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227B |
| Other | |
| Base Product Number | IXTN32 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 196 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11100 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 500mA, 10V |
| Series | PolarP™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |