IXTP01N100D
IXYS美国

IXTP01N100D

在产单 FET,MOSFETTO-220-3

MOSFET N-CH 1000V 400MA TO220AB

沟道N 沟道
耐压1 kV
连续漏极电流400 mA
导通电阻80 Ω

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技术参数

沟道N 沟道
耐压1 kV
连续漏极电流400 mA
导通电阻80 Ω最大 · 50mA
阈值电压4.5 V最大 · 25μA
电源
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)0V
Power Dissipation (Max)1.1W (Ta), 25W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberIXTP01
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs80Ohm @ 50mA, 0V
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 25µA

器件图片

技术资料