IXTP120N075T2
IXYS美国

IXTP120N075T2

在产单 FET,MOSFETTO-220-3

MOSFET N-CH 75V 120A TO220AB

沟道N 沟道
耐压75 V
连续漏极电流120 A
导通电阻7.7 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压75 V
连续漏极电流120 A
导通电阻7.7 mΩ最大 · 60A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)250W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberIXTP120
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4740 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs7.7mOhm @ 60A, 10V
SeriesTrenchT2™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料