IXYSUnited States

IXTP1N100

Not For New DesignsSingle FETs, MOSFETsTO-220-3

MOSFET N-CH 1000V 1.5A TO220AB

All alternatives

ChannelN-channel

Drain-source voltage1 kV

Continuous drain current1.5 A

On-resistance11 ΩMax · 1A

Gate threshold voltage4.5 VMax · 25μA

Power
Current - Continuous Drain (Id) @ 25°C	1.5A (Tc)
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	54W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Other
Base Product Number	IXTP1
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
Mfr	IXYS
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	11Ohm @ 1A, 10V
Series	-
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 25µA