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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage300 V
Continuous drain current36 A
On-resistance110 mΩMax · 18A
Gate threshold voltage5.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberIXTP36
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs110mOhm @ 18A, 10V
SeriesPolarHT™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 250µA

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