IXYSUnited States
MOSFET N-CH 1000V 3A TO220AB
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1 kV
Continuous drain current3 A
On-resistance5.5 ΩMax · 1.5A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Power Dissipation (Max) | 125W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Other | |
| Base Product Number | IXTP3 |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 5.5Ohm @ 1.5A, 0V |
| Series | Depletion |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | - |