IXYS美国

IXTT2N170D2

在产单 FET,MOSFETTO-268AA

MOSFET N-CH 1700V 2A TO268

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沟道N 沟道
耐压1.7 kV
连续漏极电流2 A
导通电阻6.5 Ω

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技术参数

沟道N 沟道
耐压1.7 kV
连续漏极电流2 A
导通电阻6.5 Ω最大 · 1A
电源
Current - Continuous Drain (Id) @ 25°C2A (Tj)
Drain to Source Voltage (Vdss)1700 V
Drive Voltage (Max Rds On, Min Rds On)-
Power Dissipation (Max)568W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268AA
其他
Base Product NumberIXTT2
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3650 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs6.5Ohm @ 1A, 0V
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id-

技术资料

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