IXYS美国

IXTT80N20L

在产单 FET,MOSFETTO-268AA

MOSFET N-CH 200V 80A TO268

沟道N 沟道
耐压200 V
连续漏极电流80 A
导通电阻32 mΩ

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技术参数

沟道N 沟道
耐压200 V
连续漏极电流80 A
导通电阻32 mΩ最大 · 40A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)520W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268AA
其他
Base Product NumberIXTT80
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6160 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs32mOhm @ 40A, 10V
SeriesLinear
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料