IXYS美国

IXTU01N100

末批订购单 FET,MOSFETTO-251AA

MOSFET N-CH 1000V 100MA TO251

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沟道N 沟道
耐压1 kV
连续漏极电流100 mA
导通电阻80 Ω

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技术参数

沟道N 沟道
耐压1 kV
连续漏极电流100 mA
导通电阻80 Ω最大 · 100mA
阈值电压4.5 V最大 · 25μA
电源
Current - Continuous Drain (Id) @ 25°C100mA (Tc)
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)25W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251AA
其他
Base Product NumberIXTU01
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds54 pF @ 25 V
MfrIXYS
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs80Ohm @ 100mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 25µA

技术资料

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