IXYSUnited States
MOSFET N-CH 1000V 8A TO251
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1 kV
Continuous drain current8 A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Package | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | TO-251AA |
| Other | |
| Base Product Number | IXTU08 |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | - |
| Series | Polar |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | - |
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