IXYS美国

IXTU2N80P

停产单 FET,MOSFETTO-251AA

MOSFET N-CH 800V 2A TO251

沟道N 沟道
耐压800 V
连续漏极电流2 A
导通电阻6 Ω

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技术参数

沟道N 沟道
耐压800 V
连续漏极电流2 A
导通电阻6 Ω最大 · 1A
阈值电压5.5 V最大 · 50μA
电源
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)70W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251AA
其他
Base Product NumberIXTU2
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs6Ohm @ 1A, 10V
SeriesPolarHV™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 50µA

技术资料