IXYS美国

IXTU8N70X2

在产单 FET,MOSFETTO-251-3

MOSFET N-CH 700V 8A TO251-3

沟道N 沟道
耐压700 V
连续漏极电流8 A
导通电阻500 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压700 V
连续漏极电流8 A
导通电阻500 mΩ最大 · 500mA
阈值电压4.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)150W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackageTO-251-3
其他
Base Product NumberIXTU8
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 10 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs500mOhm @ 500mA, 10V
SeriesUltra X2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 250µA

技术资料