IXYN75N65C3D1
IXYS美国

IXYN75N65C3D1

在产单 IGBT

IGBT

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技术参数

电源
Current - Collector (Ic) (Max)150 A
Current - Collector Pulsed (Icm)360 A
Power - Max600 W
Voltage - Collector Emitter Breakdown (Max)650 V
环境与封装
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B
其他
Base Product NumberIXYN75
Gate Charge122 nC
IGBT Type-
Input TypeStandard
MfrIXYS
Product StatusActive
Reverse Recovery Time (trr)65 ns
SeriesXPT™, GenX3™
Switching Energy2mJ (on), 950µJ (off)
Td (on/off) @ 25°C26ns/93ns
Test Condition400V, 60A, 3Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 60A

器件图片

技术资料