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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
| Power - Max | 350 mW |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 1 µA |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Supplier Device Package | TO-92 (TO-226) |
| Other | |
| Base Product Number | J111 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Mfr | onsemi |
| Product Status | Obsolete |
| Resistance - RDS(On) | 30 Ohms |
| Series | - |