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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)5 mA @ 15 V
Power - Max350 mW
Voltage - Breakdown (V(BR)GSS)35 V
Voltage - Cutoff (VGS off) @ Id5 V @ 1 µA
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds5pF @ 10V (VGS)
MfrCentral Semiconductor Corp
Product StatusActive
Resistance - RDS(On)50 Ohms
Series-

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