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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)7 mA @ 15 V
Power - Max350 mW
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id3 V @ 10 nA
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds5.5pF @ 10V (VGS)
MfrCentral Semiconductor Corp
Product StatusObsolete
Resistance - RDS(On)125 Ohms
Series-

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