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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)2 mA @ 15 V
Power - Max350 mW
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id500 mV @ 1 nA
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds-
MfrFairchild Semiconductor
Product StatusObsolete
Series-

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