Taiwan Semiconductor CorporationTaiwan, China
DIODE BRIDGE 4A 200V KBL
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View full reportTechnical parameters
Key specs
Reverse voltage200 V
Average rectified current4 A
Forward voltage1.1 VMax · 4 A
TypeStandard
| Power | |
|---|---|
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 4 A |
| Voltage - Peak Reverse (Max) | 200 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tray |
| Package / Case | 4-SIP, KBL |
| Supplier Device Package | KBL |
| Other | |
| Diode Type | Single Phase |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | - |
| Technology | Standard |
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