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Technical parameters

Key specs

TypePNP
Collector-emitter voltage150 V
Collector current50 mAMax
DC current gain12010mA
Power800 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)50 mA
Power - Max800 mW
Voltage - Collector Emitter Breakdown (Max)150 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 10mA, 5V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92-3
Other
Base Product NumberKSA910
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic800mV @ 1mA, 10mA

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