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Technical parameters

Key specs

TypePNP
Collector-emitter voltage120 V
Collector current50 mAMax
DC current gain4301mA
Power500 mWMax
Power
Current - Collector Cutoff (Max)1µA
Current - Collector (Ic) (Max)50 mA
Power - Max500 mW
Voltage - Collector Emitter Breakdown (Max)120 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce430 @ 1mA, 6V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
MfrFairchild Semiconductor
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA

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