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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage60 V
Collector current700 mAMax
DC current gain4050mA
Power800 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)700 mA
Power - Max800 mW
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 50mA, 2V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
Base Product NumberKSC1008
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA

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