全部替代型号

查看完整报告

技术参数

电源
Current - Collector (Ic) (Max)20mA
Power - Max250mW
Voltage - Collector Emitter Breakdown (Max)30V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 2mA, 10V
Frequency - Transition700MHz
Gain20dB ~ 24dB
Noise Figure (dB Typ @ f)2dB ~ 3dB @ 200MHz
环境与封装
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
其他
MfrFairchild Semiconductor
Product StatusObsolete
Series-
Transistor TypeNPN

技术资料