类型NPN
集射极耐压150 V
集电极电流50 mA
放大倍数 hFE120
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类型NPN
集射极耐压150 V
集电极电流50 mA最大
放大倍数 hFE12010mA
功率800 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 50 mA |
| Power - Max | 800 mW |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
| Frequency - Transition | 100MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| 其他 | |
| Mfr | Fairchild Semiconductor |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
技术资料
该型号暂未收录资料。