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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage120 V
Collector current800 mAMax
DC current gain80100mA
Power900 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)800 mA
Power - Max900 mW
Voltage - Collector Emitter Breakdown (Max)120 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 5V
Frequency - Transition120MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92-3
Other
Base Product NumberKSC2316
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA

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