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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage200 V
Collector current100 mAMax
DC current gain10010mA
Power1.2 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)100 mA
Power - Max1.2 W
Voltage - Collector Emitter Breakdown (Max)200 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Frequency - Transition150MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126-3
Other
Base Product NumberKSC3502
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA

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