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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage45 V
Collector current200 mAMax
DC current gain7050mA
Power400 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)200 mA
Power - Max400 mW
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 1V
Frequency - Transition200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberKSC815
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA

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