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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage100 V
Collector current5 AMax
DC current gain20003A
Power1.5 WMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)5 A
Power - Max1.5 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A, 2V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberKSD560
Mfronsemi
Product StatusLast Time Buy
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 3mA, 3A

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