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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage80 V
Collector current500 mAMax
DC current gain50100mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)500 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageCut Tape (CT) Tape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberKSP06
Mfronsemi
Product StatusObsolete
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA

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