All alternatives

View full report

Technical parameters

Key specs

TypePNP
Collector-emitter voltage60 V
Collector current500 mAMax
DC current gain50100mA
Power625 mWMax
Power
Current - Collector Cutoff (Max)100nA
Current - Collector (Ic) (Max)500 mA
Power - Max625 mW
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Frequency - Transition50MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageCut Tape (CT) Tape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberKSP55
Mfronsemi
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA

Documents