GeneSiC SemiconductorUnited States
DIODE MOD SCHOT 200V 100A 2TOWER
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 100A |
| Current - Reverse Leakage @ Vr | 3 mA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 100 A |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Bulk |
| Package / Case | Twin Tower |
| Supplier Device Package | Twin Tower |
| Other | |
| Base Product Number | MBR200200 |
| Diode Configuration | 1 Pair Common Anode |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |