GeneSiC SemiconductorUnited States
DIODE MOD SCHOTT 40V 200A 2TOWER
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200A (DC) |
| Current - Reverse Leakage @ Vr | 5 mA @ 20 V |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 100 A |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Package | Bulk |
| Package / Case | Twin Tower |
| Supplier Device Package | Twin Tower |
| Other | |
| Base Product Number | MBR20040 |
| Diode Configuration | 1 Pair Common Cathode |
| Mfr | GeneSiC Semiconductor |
| Product Status | Active |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |