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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current2 A
On-resistance137 mΩMax · 1A
Gate threshold voltage2.6 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Power Dissipation (Max)1W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / Case3-SMD, Flat Lead
Supplier Device PackageSC-70FL/MCPH3
Other
Base Product NumberMCH3486
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 20 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs137mOhm @ 1A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.6V @ 1mA

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